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| PRELIMINARY * PERFORMANCE 7.0 - 11.0 GHz Operating Bandwidth 1.5 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports FMA219 X-BAND LNA MMIC * DESCRIPTION AND APPLICATIONS The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. Typical applications include low-noise front end amplifiers, and general gain block utilizations in Xband. The amplifier is unconditionally stable over all load states (-45 to +85C), and conditionally stable if the input port is open-circuited. * ELECTRICAL SPECIFICATIONS AT 22C Parameter Operating Frequency Bandwidth Small Signal Gain Operating Current Small Signal Gain Flatness Noise Figure 3 -Order Intermodulation Distortion Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation rd Symbol BW S21 IOP S21 NF IMD P1dB S11 S22 S12 Test Conditions VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP No RF input VDD = +3 V IDD = IOP VDD = +3 V, IDD = IOP VDD = +3 V, IDD = IOP POUT = +1.5 dBm SCL VDD = +3 V VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP Min 7 19 50 Typ 21 65 0.5 1.5 -47 Max 11 23 85 0.8 1.7 Units GHz dB mA dB dBc dBm 11.5 12.5 -7 -16 -40 -3 -10 -30 dB dB dB Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY * ABSOLUTE MAXIMUM RATINGS1 Parameter Supply Voltage Supply Current RF Input Power Storage Temperature Total Power Dissipation Gain Compression 1 FMA219 X-BAND LNA MMIC Symbol VDD IDD PIN TSTG PTOT Comp. 2 2 Test Conditions For any operating current For VDD < 5V For standard bias conditions Non-Operating Storage See De-Rating Note below Under any bias conditions Min Max 6 100 -5 Units V mA dBm C mW dB -40 150 600 5 Simultaneous Combination of Limits TAmbient = 22C unless otherwise noted 2 or more Max. Limits 80 % Users should avoid exceeding 80% of 2 or more Limits simultaneously Notes: * Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. * Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power * Total Power Dissipation to be de-rated as follows above 22C: PTOT= 0.6 - (0.004W/C) x TCARRIER where TCARRIER = carrier or heatsink temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C carrier temperature: PTOT = 0.6 - (0.004 x (55 - 22)) = 0.47W * For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with some degradation in thermal de-rating performance (PTOT = 550mW) * Note on Thermal Resistivity: The nominal value of 250C/W is stated for the input stage, which will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175C/W. * HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. * Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY FMA219 X-BAND LNA MMIC * ASSEMBLY DRAWING Input and output thin film substrates with 50 microstrip transmission lines. Substrate thickness 250m or thinner is recommended. 25m dia. Au wire (x2) on input and output ports, less than 1000m length each 150pF capacitor To +VDD 75m nominal gap on each side 250m Au ribbon recommended Notes: * Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic or thermosonic bonding is not recommended. * The recommended die attach is conductive epoxy, following the manufacturer's recommended curing procedure. * For eutectic die attach the maximum time at 280-300C is 60 seconds, and should be kept to a minium. * The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical. All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY * TYPICAL RF PERFORMANCE (VDD = +3V, IDD = IOP) FMA219 FREQUENCY RESPONSE FMA219 X-BAND LNA MMIC 24 SSG, Input / Output Return Loss (dB) 20 16 12 8 4 0 -4 -8 -12 -16 -20 5 6 7 8 9 10 11 12 13 14 15 Frequency [GHz] S21 S11 S22 * TYPICAL NOISE FIGURE PERFORMANCE FMA219BF NOISE FIGURE 1.4 1.3 1.2 1.1 Noise Figure (dB) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 7 8 9 10 11 Frequency (GHz) Multiple traces show typical die variation across a 150mm (6 in.) wafer. Note: Effect of typical bondwire inductance (25 m dia., 1000 m length, 2 ea. on input and output ports) is less than 0.5 dB decrease in S21 (11GHz), and no measurable effect on noise figure. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com PRELIMINARY * POWER TRANSFER CHARACTERISTIC FMA219BF POWER TRANSFER CHARACTERISTIC 16.0 Pout@7GHz Pout@9GHz FMA219 X-BAND LNA MMIC 4.0 14.0 3.5 12.0 Output Power (dBm) Pout@11GHz Comp@7GHz 3.0 Compression Point, (dB) 10.0 Comp@9GHz Comp@11GHz 2.5 8.0 2.0 6.0 1.5 4.0 1.0 2.0 0.5 0.0 -23.0 -21.0 -19.0 -17.0 -15.0 -13.0 Pin (dBm) -11.0 -9.0 -7.0 -5.0 0.0 -3.0 * TYPICAL 3RD-ORDER INTERMODULATION PERFORMANCE FMA219 IM PRODUCTS vs. INPUT POWER AT 9.0 GHz -15.00 11.0 Pout Im3, dBc -20.00 Ou 9.0 tp ut Po 7.0 we r (d B 5.0 m) 3.0 IM Pr od uc -30.00 ts (d Bc -35.00 ) -25.00 -40.00 1.0 -19.0 -45.00 -17.0 -15.0 -13.0 Input Power (dBm) -11.0 -9.0 -7.0 Equivalent output IP3 performance exceeds 24 dBm, input IP3 is typically +2 dBm. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: sales@filcsi.com |
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